ارزيابي و شبيه‌سازي يك راه‌انداز گيت با قابليت بالا براي ماسفت‌هاي سيليكون‌كاربيد

eva‎luation an‎d simulation of a high-performance gate driver for silicon carbide MOSFETs

مهندسي برق

In this research, the electrical an‎d structural characteristics of next-generation silicon carbide (SiC) power MOSFETs are first investigated, an‎d a general comparison with silicon power MOSFETs is performed. The high switching frequency capability of these devices is examined, an‎d their advantages over silicon MOSFETs in power electronic circuits are analyzed. Subsequently, the challenges associated with their application in power electronic circuits are discussed, an‎d the gate driving requirements of these MOSFETs are investigated. The limitations of conventional gate drivers when applied to SiC MOSFETs are studied, an‎d the necessity of employing a high-performance an‎d reliable gate driver is emphasized. One of the most important challenges in switching operation is the reduction of drain–source voltage oscillations an‎d drain current oscillations during the turn-on an‎d turn-off transient intervals of the MOSFET. This issue becomes more critical in silicon carbide power MOSFETs due to their higher switching frequencies compared to silicon power MOSFETs. For this purpose, the effect of gate–source voltage variation on the drain–source voltage an‎d drain current during turn-on an‎d turn-off transients is first investigated. Then, a specific gate driving strategy is proposed that improves switching performance an‎d mitigates switching-related issues under hard-switching conditions compared to conventional gate drivers. The core contribution of this research is the implementation of a silicon carbide MOSFET gate driver based on an active gate driving approach an‎d inspired by the digital-to-analog concept. Switching characteristics, including switching losses as well as overshoot an‎d undershoot in the drain–source voltage an‎d drain current, are compared, an‎d the capability of the proposed method in reducing these overshoots an‎d undershoots is eva‎luated. Subsequently, through simulation an‎d analysis of the results, the effectiveness of the proposed method is examined in comparison with a conventional gate driver. Finally, the experimental results of the implemented active digital gate driver an‎d the conventional gate driver are compared

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