يك مدار كم مصرف جديد براي تغيير وضعيت سلول حافظه مغناطيسي مبتني بر فناوري SHE Assisted STT

Abstract With the advancement of technology an‎d growing deman‎d for high-speed, low-power memory solutions, the limitations of MOSFET-based conventional memory technologies have become increasingly apparent. Challenges such as high power consumption an‎d lower density have driven the exploration of emerging technologies like Magnetic Tunnel Junction (MTJ)-based memory. MTJ devices offer significant advantages, including non-volatility, ultra-low power consumption, an‎d fast switching speeds, making them promising can‎didates for next-generation memory applications. This study presents a novel approach to enhance the switching performance of MTJ memory cells through the introduction of an inductive pre-charge circuit to the conventional switching architecture. The proposed design leverages the energy storage capability of inductors to optimize the switching current profile. The circuit achieves simultaneous improvements in both power efficiency an‎d switching speed. Simulation results demonstrate that the proposed design achieves 35/98% reduction in energy consumption compared to conventional approaches. These improvements highlight the effectiveness of the inductive pre-charge technique for future non-volatile memory applications. Furthermore, our analysis confirms that the added inductive circuit does not significantly increase design complexity an‎d remains compatible with existing fabrication technologies. This research represents a significant step toward developing high-performance, energy-efficient MTJ-based memory solutions. Keywords: Magnetic Tunnel Junction (MTJ), Inductive pre-charge circuit, Spin Transfer Torque (STT), Spin Hall Effect (SHE), Low-power design.

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