بررسي خواص ترابرد الكتروني حالت هـاي لبه اي در يك نانو نوار دولايه اي مويره

In the current era, the design an‎d application of topological insulators have ecome one of the key objectives in condensed matter physics. Among these, transition metal dichalcogenides (TMDs) stan‎d out as a class of two-dimensional materials with nique an‎d remarkable topological properties. Studies indicate that when these materials are arranged in moiré bilayer structures, they exhibit the behavior of a Chern topological insulator. Interestingly, in this configuration, their electronic structure bears a striking resemblance to the Haldane model for regular two-dimensional hexagonal lattices. In this study, we first investigate the topological properties of monolayer an‎d moiré bilayer structures of transition metal dichalcogenides. Subsequently, we examine the effect of vacancy defects in these systems an‎d demonstrate that such defects lead to the formation of localized states around the vacancy sites. Using a superposition of edge-state wavefunctions from the Haldane model, we analytically derive these localized states an‎d analyze their properties, including the tunneling phenomenon between two localized states.

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